Text preview for : but11.pdf part of Samsung but11 . Electronic Components Datasheets Active components Transistors Samsung but11.pdf
Back to : but11.pdf | Home
BUT11/11A NPN SILICON TRANSISTOR
HIGH VOLTAGE POWER SWITCH
TO-220
SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage VCES 850 V
: BUT11 1000 V
Collector Emitter Voltage : BUT11A VCEO 400 V
: BUT11 450 V
Emitter Base Voltage : BUT11A VEBO 9 V 1.Base 2.Collector 3.Emitter
Collector Current (DC) IC 5 A
Collector Current (Pulse) IC 10 A
Base Current (DC) IB 2 A
Base Current (Pulse) IB 4 A
Collector Dissipation ( T C=25) PC 100 W
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150
ELECTRICAL CHARACTERISTICS (Tc =25)
Characteristic Symbol Test Conditions Min Typ Max Unit
*Collector-Emitter Sustaining Voltage : BUT11 VCEO (sus) IC = 100mA, IB = 0 400 V
: BUT11A 450 V
Collector Cutoff Current : BUT11 ICES VCE = 850V, VBE = 0 1 mA
: BUT11A VCE = 1000V, VBE = 0 1 mA
Emitter Cutoff Current IEBO VBE = 9V, IC = 0 10 mA
Collector Emitter Saturation Voltage : BUT11 VCE(sat) IC = 3A, IB = 0.6A 1.5 V
: BUT11A IC = 2.5A, IB = 0.5A 1.5 V
Base Emitter Saturation Voltage : BUT11 VBE(sat) IC = 3A, IB = 0.6A 1.3 V
: BUT11A IC = 2.5A, IB = 0.5A 1.3 V
Turn On Time tON VCC = 250V, IC = 2.5A 1 uS
Storage Time tSTG IB1 = IB2 = 0.5A 4 uS
Fall Time tF 0.8 uS
* Pulsed Test: PW = 300uS, duty cycle = 1.5%
BUT11/11A NPN SILICON TRANSISTOR