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SEMICONDUCTOR KTD1624
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTB1124.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Vollector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 3 A
Collector Current(Pulse) ICP 6 A
Base Current IB 600 mA
PC 500 mW
Collector Power Dissipation
PC* 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2
* : Package mounted on ceramic substrate(250mm 0.8t)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1
hFE(1) (Note) VCE=2V, IC=100 100 - 400
DC Current Gain
hFE (2) VCE=2V, IC=3A 35 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=100 - 0.19 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100 - 0.94 1.2 V
Transition Frequency fT VCE=10V, IC=50 - 150 -
Collector Output Capacitance Cob VCB=10V, f=1 , IE=0 - 25 -
Turn-on Time ton - 70 -
Switching
Storage Time tstg - 650 - nS
Time
Fall Time tf - 35 -
Note : hFE (1) Classification A:100 200, B:140 280, C:200 400
2008. 3. 11 Revision No : 5 1/3
KTD1624
2008. 3. 11 Revision No : 5 2/3
KTD1624
2008. 3. 11 Revision No : 5 3/3