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ST13003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s MEDIUM VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED

APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING 1
s SWITCH MODE POWER SUPPLIES 2
3

DESCRIPTION
The device is manufactured using high voltage SOT-32
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.




ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 700 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 1.5 A
I CM Collector Peak Current (tp < 5 ms) 3 A
IB Base Current 0.75 A
I BM Base Peak Current (t p < 5 ms) 1.5 A
P t ot Total Dissipation at T c = 25 o C 40 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C



January 1998 1/7
ST13003

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 3.12 C/W
o
R thj-a Thermal Resistance Junction-ambient Max 89 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)



Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CEV Collector Cut-off V CE = 700V 1 mA
Current (V BE = -1.5V) V CE = 700V T j = 125 o C 5 mA
I EBO Emitter Cut-off V EB = 9 V 1 mA
Current (IC = 0)
V CEO(sus ) Collector-Emitter I C = 10 mA 400 V
Sustaining Voltage L = 25mH
(I B = 0)
V CE(sat ) Collector-Emitter I C = 0.5 A I B = 0.1 A 0.5 V
Saturation Voltage IC = 1 A IB = 0.25 A 1 V
I C = 1.5 A I B = 0.5 A 3 V
V BE(s at) Base-Emitter I C = 0.5 A I B = 0.1 A 1.0 V
Saturation Voltage IC = 1 A IB = 0.25 A 1.2 V
h FE DC Current G ain I C = 0.5 A V CE = 2 V
Group A 8 20
Group B 15 35
IC = 1 A V CE = 2 V 5 25
RESISTIVE LO AD
tr Rise Time IC = 1 A V CC = 125 V 1.0