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2SC2879
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2879
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
Unit in mm
Specified 12.5V, 28MHz Characteristics
Output Power : Po = 100WPEP
Power Gain : Gp = 13dB
Collector Efficiency : C = 35% (Min.)
Intermodulation Distortion : IMD = -24dB(Max.)
(MIL Standard)
MAXIMUM RATINGS (Tc = 25