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PolarHTTM HiPerFET IXFR 102N30P VDSS = 300 V
Power MOSFET ID25 = 60 A
RDS(on) 36 m
(Electrically Isolated Back Surface)
trr 200 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated

Symbol Test Conditions Maximum Ratings

VDSS TJ = 25