bc817.pdf part of GSME bc817 bc817.pdf, . Electronic Components Datasheets Active components Transistors GSME bc817.pdf text manual preview

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Guilin Strong Micro-Electronics Co.,Ltd.

GM817-16 GM817-25 GM817-40

MAXIMUM RATINGS

Characteristic Symbol Rating Unit

Collector-Emitter Voltage
VCEO 45 Vdc

Collector-Base Voltage
VCBO 50 Vdc
-
Emitter-Base Voltage
VEBO 5.0 Vdc
-
Collector Current--Continuous
Ic 500 mAdc
-

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation
FR-5 Board(1)
PD 225 mW
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation
Alumina Substrate ,(2)TA=25 PD 300 mW
Derate above25 25 2.4 mW/

Thermal Resistance Junction to Ambient
RJA 417 /W

Junction and Storage Temperature]
TJ,Tstg -55to+150

DEVICE MARKING
GM817-16=6A;GM817-25=6B; GM817-40=6C

Guilin Strong Micro-Electronics Co.,Ltd.
GM817-16 GM817-25 GM817-40
ELECTRICAL CHARACTERISTICS
(TA=25
25 unless otherwise noted 25 )
25
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 45 -- Vdc
(Ic=10mAdc,IB=0)
Collector-Base Breakdown Voltage
V(BR)CBS 50 -- Vdc
(Ic=10Adc,VEB=0)
Emitter-Base Breakdown Voltage
V(BR)EBO 5.0 -- Vdc
(IE=1.0Adc,Ic=0)
Collector Cutoff Current
(VCB=20v) ICBO -- 100 nA
(VCB=20Vdc,TA=150) -- 5.0 uA
ON CHARCTERISTICS
Characteristic Symbol Min Typ Max Unit

DC Current Gain HFE --
(Ic=100mAdc,VCE=1.0Vdc) GM817-16 100 -- 250
GM817-25 160 -- 400
GM817-40 250 -- 600
(Ic=500mAdc,VCE=1.0Vdc) 40 -- --
Collector-Emitter Saturation Voltage
- VCE(sat) -- -- 0.7 Vdc
(Ic=500mAdc, IB=50mAdc)
Base-Emitter Voltage -
(Ic=500mAdc, VCE=1.0Vdc) VBE(on) -- -- 1.2 V

SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
- fT 100 -- -- MHz
(Ic=10mAdc,VCE=5.0Vdc,f=100MHz)
Output Capacitance
Cobo -- 10 -- pF
(VCB=10Vdc, f=1.0MHz)
1. FR-5=1.0