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STD8NS25
N-CHANNEL 250V - 0.38 - 8A DPAK
MESH OVERLAYTM MOSFET
PRELIMINARY DATA

TYPE VDSS RDS(on) ID

STD8NS25 250 V < 0.45 8A
s TYPICAL RDS(on) = 0.38
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
3
1

DESCRIPTION DPAK
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for INTERNAL SCHEMATIC DIAGRAM
lighting applications.



APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT



ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain-gate Voltage (RGS = 20 k) 250 V
VGS Gate- source Voltage