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PHD97NQ03LT
N-channel TrenchMOS logic level FET
Rev. 01 -- 24 March 2009 Product data sheet



1. Product profile

1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Fast switching Low on-state resistance
Lead-free packing Suitable for high frequency
Logic level threshold applications due to fast switching
characteristics

1.3 Applications
Computer motherboard high Switched-mode power supplies
frequency DC-to-DC convertors Voltage regulators

1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25