Text preview for : ksc5030pwd.pdf part of Samsung ksc5030pwd . Electronic Components Datasheets Active components Transistors Samsung ksc5030pwd.pdf
Back to : ksc5030pwd.pdf | Home
KSC5030 NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILTY
HIGH SPEED SWITCHING TO-3P
WIDE SOA
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage VCBO 1100 V
Collector- Emitter Voltage VCEO 800 V
Emitter- Base Voltage VEBO 7 V
Collector Current (DC) IC 6 A
Collector Current (Pulse) IC 20 A
Base Current IB 3 A
Collector Dissipation (T C=25 ) PC 100 W 1.Base 2.Collector 3.Emitter
Junction Temperature TJ 150
Storage Temperature T STG -55 ~ 150
ELECTRICAL CHARACTERISTICS )
(T C=25
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 1100 V
Collector Emitter Breakdown Voltage BVCEO IC = 5mA, RBE = 800 V
Emitter Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 7 V
Collector Emitter Sustaining Voltage VCEX(sus) IC = 3A, IB2 = 0.6A 800 V
L = 2mH, Clamped
Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 10 uA
DC Current Gain hFE1 VCE = 5V, IC = 0.4A 10 40
hFE2 VCE = 5V, IC = 2A 8
Collector Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 0.6A 2 V
Base Emitter Saturation Voltage VBE(sat) IC = 3A, IB = 0.6A 1.5 V
Output Capacitance COB VCB = 10V, IE = 0, f = 1MHz 120 pF
Current Gain Bandwidth Product fT VCE = 10V, IC = 0.4A 15 MHz
Turn On Time tON VCC = 400V 0.5 uS
Storage Time tS 51B1 = -2.5I B 2 = IC = 4A 3 uS
Fall Time tF RL = 100