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EMF24
Power management (dual transistors)


FEATURES
SOT-563
2SC4617 and DTC114E are housed independently in a package.
Power management circuit
Power switching circuit in a single package
Mounting cost and area can be cut in half
1




MARKING: F24


TR1 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

TR1 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions M in T yp Max Unit

Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V

Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 7 V

Collector cut-off current ICBO VCB=60V,IE=0 0.1 A

Emitter cut-off current IEBO VEB=7V,IC=0 0.1 A

DC current gain hFE VCE=6V,IC=1mA 180 390

Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.4 V

Transition frequency fT VCE=12V,IC=2mA,f=100MHz 180 MHz

Collector output capacitance Cob VCB=12V,IE=0,f=1MHz 3.5 pF




1
JinYu www.htsemi.com
semiconductor

Date:2011/ 05
EMF24

DTr2 Maximum ratings (Ta=25 )
Parameter Symbol Limits Unit

Supply voltage VCC 50 V

Input voltage VIN -10~40 V

IO 50
Output current mA
IC(MAX) 100

Power dissipation PC 150 mW

Junction temperature Tj 150

Storage temperature Tstg -55~150


DTr2 Electrical characteristics (Ta=25 )
Parameter Symbol Min. Typ Max. Unit Conditions
VI(off) 0.5 VCC=5V ,IO=100A
Input voltage V
VI(on) 3 VO=0.3V ,IO=10 mA

Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA

Input current II 0.88 mA VI =5V

Output current IO(off) 0.5 A VCC=50V, VI=0

DC current gain GI 30 VO=5V ,IO=5mA

Input resistance R1 7 10 13 K

Resistance ratio R2/R1 0.8 1 1.2

Transition frequency fT 250 MHz VO=10V ,IO=5mA,f=100MHz




2
JinYu www.htsemi.com
semiconductor

Date:2011/ 05