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2SC2073(NPN)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
Features 1
Wide safe Operating Area.
Complementary to 2SA940
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Paramenter Value Units
VCBO Collector-Base Voltage 150 V
VCEO Collector-Emitter Voltage 150 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 1.5 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =100A, IE=0 150 V
Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 150 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=120V, IE=0 10 A
Emitter cut-off current IEBO VEB=5V, IC=0 10 A
DC current gain hFE VCE=10V, IC=0.5A 40 140
Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=50mA 1.5 V
Base-emitter voltage VBE VCE=10V, IC=0.5A 0.65 0.85 V
Transition frequency fT VCE=10V, IC=0.5A 4 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 35 pF
2SC2073(NPN)
TO-220 Transistor
Typical Characteristics