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2SD1664
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
R o H S C o m p lia n t P ro d u c t
D
D1
Features A
SOT-89
E1
E
b1
1
2
Power dissipation e
b
C
3
L
o
PCM : 0.5 W (Tamb= 25 C) e1
1.BASE
Collector current Dimensions In Millimeters Dimensions In Inches
2.COLLECTOR Symbol
ICM : 1 A 3.EMITTER
Min Max
1.600
Min
0.055
Max
0.063
A 1.400
Collector-base voltage b 0.320
0.360
0.520
0.560
0.013
0.014
0.020
0.022
b1
V(BR)CBO : 40 V c
D
0.350
4.400
0.440
4.600
0.014
0.173
0.017
0.181
Operating & Storage junction Temperature D1
E
1.400
2.300
1.800
2.600
0.055
0.091
0.071
0.102
O O
3.940 4.250 0.155 0.167
Tj, Tstg : -55 C~ +150 C E1
e 1.500TYP 0.060TYP
e1 2.900 3.100 0.114 0.122
L 0.900 1.100 0.035 0.043
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter Symbol Test Conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 50 A IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA IB =0 32 V
Emitter-base breakdown voltage V(BR)EBO IE= 50 A IC=0 5 V
Collector cut-off current ICBO VCB= 20 V, IE=0 0.5 A
Emitter cut-off current IEBO VEB= 4V, IC=0 0.5 A
DC current gain hFE VCE= 3V, IC = 0.1A 82 390
Collector-emitter saturation voltage VCE (sat) I C= 500mA, IB= 50mA 0.4 V
VCE= 5V , IC= 50mA
Transition frequency fT 150 MHz
f=1MHz
VCB= 10V, IE= 0
Output Capacitance Cob 15 pF
f=1MHz
Classification of hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking DAP DAQ DAR
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 3
2SD1664
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
ELECTRICAL CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 2 of 3
2SD1664
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 3 of 3