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184PIN DDR266 Unbuffered DIMM
TS128MLD64V6E 1GB With 64Mx4 CL2.5
Description Placement
The TS128MLD64V6E is a 128Mx64bits Double Data
Rate SDRAM high density for DDR266. The
TS128MLD64V6E consists of 32pcs CMOS 64Mx4 bits
Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
packages and a 2048 bits serial EEPROM on a 184-pin
printed circuit board. The TS128MLD64V6E is a Dual
In-Line Memory Module and is intended for mounting into
184-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible A
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications. B
Features