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STL15N3LLH5
N-channel 30 V, 0.0045 , 15 A, PowerFLATTM (3.3 x 3.3)
STripFETTM V Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STL15N3LLH5 30 V < 0.0054 15 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
PowerFLATTM(3.3x3.3)
t( s)
uc
High avalanche ruggedness
(Chip scale package)
Low gate drive power losses
d
Applications
P ro
Switching applications Figure 1.
le te
Internal schematic diagram
Description
so
Ob
th
This product utilizes the 5 generation of design
rules of ST's proprietary STripFETTM technology.
The lowest available RDS(on)*Qg, in this chip scale -
(s)
package, makes this device suitable for the most
ct
demanding DC-DC converter applications, where
high power density is to be achieved.
o du
e Pr
Table 1. o let Device summary
O bs Order code
STL15N3LLH5
Marking
15N3L
Package
PowerFLATTM (3.3 x 3.3)
Packaging
Tape and reel
November 2008 Rev 2 1/12
www.st.com 12
Contents STL15N3LLH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
t( s)
d uc
P ro
le te
so
- Ob
ct (s)
o du
e Pr
o let
O bs
2/12
STL15N3LLH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage