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SUM110N03-04P
New Product Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
PRODUCT SUMMARY D Optimized for Low-Side Synchronous Rectifier Operation
V(BR)DSS (V) rDS(on) (W) ID (A) D New Package with Low Thermal Resistance
D 100% Rg Tested
0.0042 @ VGS = 10 V 110
30
0.0065 @ VGS = 4.5 V 77 APPLICATIONS
D DC/DC Converters
D Synchronous Rectifier
D
TO-263
G
G D S
Top View
S
Ordering Information: SUM110N03-04P
SUM110N03-04P-E3 (Lead Free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS "20 V
TC = 25_C 110
Continuous Drain Current (TJ = 175_C) ID
TC = 100_C 88
A
Pulsed Drain Current IDM 300
Avalanche Current IAR 55
Repetitive Avalanche Energya L = 0.1 mH EAR 151 mJ
TC = 25_C 120b
Maximum Power Dissipationa PD W
TA = 25_Cc 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mountc RthJA 40
_C/W
Junction-to-Case RthJC 1.25
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 72366 www.vishay.com
S-32523--Rev. B, 08-Dec-03 1
SUM110N03-04P
Vishay Siliconix New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 30
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 1
g
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C 50 mA
m
VDS = 30 V, VGS = 0 V, TJ = 175_C 250
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 20 A 0.0033 0.0042
VGS = 10 V, ID = 20 A, TJ = 125_C 0.0063
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = 10 V, ID = 20 A, TJ = 175_C 0.0076
VGS = 4.5 V, ID = 20 A 0.0052 0.0065
Forward Transconductancea gfs VDS = 15 V, ID = 20 A 20 S
Dynamicb
Input Capacitance Ciss 5100
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 860 pF
Reverse Transfer Capacitance Crss 430
Gate-Resistance Rg 0.5 1.0 1.7 W
Total Gate Chargeb Qg 40 60
Gate-Source Chargeb Qgs VDS = 15 V, VGS = 4.5 V, ID = 50 A
, , 18 nC
Gate-Drain Chargeb Qgd 16
Turn-On Delay Timeb td(on) 12 20
Rise Timeb tr 12 20
VDD = 15 V, RL = 0.3 W
ns
Turn-Off Delay Timeb td(off) ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W 40 60
Fall Timeb tf 10 15
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current IS 100
A
Pulsed Current ISM 300
Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.2 1.5 V
Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/ms 40 80 ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 72366
2 S-32523--Rev. B, 08-Dec-03
SUM110N03-04P
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 120
VGS = 10 thru 5 V
100
200
80
I D - Drain Current (A)
I D - Drain Current (A)
150
4V
60
100
40
TC = 125_C
50
20
3V 25_C
2V -55_C
0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
180 0.010
TC = -55_C
150
0.008
r DS(on) - On-Resistance ( W )
25_C
g fs - Transconductance (S)
120
125_C 0.006 VGS = 4.5 V
90
0.004 VGS = 10 V
60
0.002
30
0 0.000
0 20 40 60 80 100 0 20 40 60 80 100
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
8000 10
7000
VDS = 15 V
V GS - Gate-to-Source Voltage (V)
8 ID = 50 A
6000 Ciss
C - Capacitance (pF)
5000
6
4000
4
3000
2000
Coss 2
1000
Crss
0 0
0 6 12 18 24 30 0 20 40 60 80 100
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 72366 www.vishay.com
S-32523--Rev. B, 08-Dec-03 3
SUM110N03-04P
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
1.8 100
VGS = 10 V
ID = 30 A
1.6
r DS(on) - On-Resistance (W)
I S - Source Current (A)
1.4 TJ = 150_C
(Normalized)
TJ = 25_C
1.2 10
1.0
0.8
0.6 1
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
Drain-Source Voltage Breakdown
vs. Junction Temperature
40
ID = 1.0 mA
38
36
V (BR)DSS (V)
34
32
30
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
www.vishay.com Document Number: 72366
4 S-32523--Rev. B, 08-Dec-03
SUM110N03-04P
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area, Junction-to-Case
120 1000
Limited by rDS(on)
10 ms
100
100 100 ms
I D - Drain Current (A)
I D - Drain Current (A)
80
1 ms
60 10
10 ms
dc, 100 ms
40
1
TC = 25_C
20 Single Pulse
0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72366 www.vishay.com
S-32523--Rev. B, 08-Dec-03 5
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1