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Supertex inc. TN0106

N-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description
Low threshold - 2.0V max. This low threshold, enhancement-mode (normally-off) transistor
High input impedance utilizes a vertical DMOS structure and Supertex's well-proven,
Low input capacitance - 50pF typical silicon-gate manufacturing process. This combination produces
Fast switching speeds a device with the power handling capabilities of bipolar transistors
Low on-resistance and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
Free from secondary breakdown
this device is free from thermal runaway and thermally-induced
Low input and output leakage
secondary breakdown.

Applications Supertex's vertical DMOS FETs are ideally suited to a wide range
Logic level interfaces