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STL21N65M5
N-channel 650 V, 0.175 , 17 A PowerFLATTM (8x8) HV
ultra low gate charge MDmeshTM V power MOSFET
Features
VDSS @ RDS(on)
Type ID
TJmax max
STL21N65M5 710 V < 0.190 17 A (1)
1. The value is rated according to Rthj-case
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description Figure 1. Internal schematic diagram
The devices are N-channel MDmeshTM V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics' well-known
PowerMESHTM horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order code Marking Package Packaging
STL21N65M5 21N65M5 PowerFLATTM (8x8) HV Tape and reel
June 2010 Doc ID 17438 Rev 2 1/14
www.st.com 14
Contents STL21N65M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 17438 Rev 2
STL21N65M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 650 V
VGS Gate-source voltage