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3DD13003B(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
4.45
2. COLLECTOR 5.21
3. BASE
1.25MAX
4.32
2.92 5.33
MIN
MIN
6.35 MIN
Features
Seating Plane
12.7
0.48
0.41
power switching applications 3.43
0.53
0.41
MIN
2.41
2.67
MAXIMUM RATINGS (TA=25 unless otherwise noted)
3.18
Symbol Parameter Value Units 4.19 2.03
2.67
VCBO Collector-Base Voltage 700 V 1.14
1.40
2.03
VCEO Collector-Emitter Voltage 400 V 2.67
VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V
Collector cut-off current ICBO VCB= 700V, IE=0 100