Text preview for : ste70nm50.pdf part of ST ste70nm50 . Electronic Components Datasheets Active components Transistors ST ste70nm50.pdf
Back to : ste70nm50.pdf | Home
STE70NM50
N-CHANNEL 500V - 0.045 - 70A ISOTOP
Zener-Protected MDmeshTMPower MOSFET
TYPE VDSS RDS(on) ID
STE70NM50 500V < 0.05 70 A
n TYPICAL RDS(on) = 0.045
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n IMPROVED ESD CAPABILITY
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL ISOTOP
n INDUSTRY'S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent INTERNAL SCHEMATIC DIAGRAM
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain-gate Voltage (RGS = 20 k) 500 V
VGS Gate- source Voltage