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2SB435 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
! Complement to 2SD235
ABSOLUTE MAXIMUM RATINGS (TA=25)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base voltage VEBO -5 V
Collector Current (DC) IC -3 A
Collector Dissipation (Tc=25) PC 25 W
Junction Temperature Tj 150
Storage Temperature Tstg -50~150
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current ICBO VCB= -50V , IE=0 -10