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2SD1766
TRANSISTOR (NPN)
FEATURES SOT-89
Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
Complements to 2SB1188 1. BASE

MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1
Symbol Parameter Value Units
2
VCBO Collector-Base Voltage 40 V 3. EMITTER 3
VCEO Collector-Emitter Voltage 32 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V

Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V

Collector cut-off current ICBO VCB=20V, IE=0 1 A

Emitter cut-off current IEBO VEB=4V, IC=0 1 A

DC current gain hFE(1) VCE=3V, IC=500mA 82 390

Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 0.8 V

Transition frequency fT VCE=5V, IC=50mA, f=100MHz 100 MHz

Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF

CLASSIFICATION OF hFE(1)
Rank P Q R

Range 82-180 120-270 180-390

Marking DBP DBQ DBR

1

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2SD1766

2

JinYu www.htsemi.com
semiconductor