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NPN EPITAXIAL
TIP110/111/112 SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN TO-220
MIN hFE=1000 @ VCE=4V, IC=1A
LOW COLLECTOR-EMITTER
SATURATION VOLTAGE
MONOLITHIC CONSTRUCTION WITH BUILT
IN BASE-EMITTER SHUNT RESISTORS
INDUSTRIAL USE
Complementary to TIP115/116/117
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage :TIP110 VCBO 60 V
1.Base 2.Collector 3.Emitter
: TIP111 80 V
: TIP112 100 V
Collector Emitter Voltage
: TIP110 VCEO 60 V
: TIP111 80 V
: TIP112 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 2 A
Collector Current (Pulse) IC 4 A
Base Current (DC) IB 50 ~
Collector Dissipation ( T A=5) PC 2 W
Collector Dissipation ( T C=5) PC 50 W
Junction Temperature TJ 150
Storage Temperature T STG -65~150
ELECTRICAL CHARACTERISTICS (T C =25)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage VCEO(sus)
: TIP110 IC = 30mA, IB = 0 60 V
: TIP111 80 V
: TIP112 100 V
Collector Cutoff Current : TIP110 ICEO VCE = 30V, IB = 0 2 mA
: TIP111 VCE = 40V, IB = 0 2 mA
: TIP112 VCE = 50V, IB = 0 2 mA
Collector Cutoff Current : TIP110 ICBO VCB = 60V, IE = 0 1 mA
: TIP111 VCB = 80V, IE = 0 1 mA
: TIP112 VCB = 100V, IE = 0 1 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 2 mA
DC Current Gain hFE VCE = 4V, IC = 1A 1000
VCE = 4V, IC = 2A 500
Collector Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 8mA 2.5 V
Base Emitter On Voltage VBE(on) VCE = 4V, IC = 2A 2.8 V
Output Capacitance COB VCB = 10V, IE = 0, f = 0.1MHz 100 pF
NPN EPITAXIAL
TIP110/111/112 SILICON DARLINGTON TRANSISTOR