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BULD1101E
High voltage fast-switching NPN Power Transistor
General features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European 3 3
2
Directive 1 1
Description DPAK IPAK
t( s)
uc
TO-252 TO-251
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
d
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
P ro
Internal schematic diagram
te
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
le
the transil protection usually necessary in typical
so
Ob
converters for lamp ballast.
Applications -
(s)
Electronic ballast for fluorescent lighting
ct
o du
e Pr
let
so
Order codes
b
O Part number
BULD1101ET4
Marking
BULD1101E
Package
DPAK
Packaging
Tape & reel
BULD1101E-1 BULD1101E IPAK Tube
May 2007 Rev 2 1/11
www.st.com 11
Electrical ratings BULD1101E
1 Electrical ratings
Table 1. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (V BE = 0) 1100 V
VCEO Collector-emitter voltage (IB = 0) 450 V
VEBO Emitter-base voltage (IC = 0) 12 V
IC Collector current 3 A
ICM Collector peak current (tP < 5ms) 6 A
IB Base current 1.5 A
IBM Base peak current (tP < 5ms) 3 A
Ptot Total dissipation at T c = 25