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STP4NB50
STP4NB50FP
N-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FP
PowerMeshTM MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP4NB50 500 V < 2.8 3.8 A
STP4NB50FP 500 V < 2.8 2.5 A
s TYPICAL RDS(on) = 2.5
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3 3
2 2
s VERY LOW INTRINSIC CAPACITANCES 1 1
s GATE CHARGE MINIMIZED
s)
TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
t(
uc
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
d
ro
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest RDS(on) per area,
P
te
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
le
APPLICATIONS
so
Ob
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
-
(s)
EQUIPMENT AND UNINTERRUPTIBLE
ct
POWER SUPPLIES AND MOTOR DRIVE
du
ABSOLUTE MAXIMUM RATINGS
Symbol
o Parameter Value Unit
VDS
e Pr
Drain-source Voltage (VGS = 0)
STP4NB50
500
STP4NB50FP
V
let
VDGR Drain-gate Voltage (RGS = 20 k) 500 V
VGS
o Gate- source Voltage