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BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 01 -- 13 July 2009 Product data sheet

1. Product profile

1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.

1.2 Features
I Low noise high gain microwave transistor
I Noise figure (NF) = 0.7 dB at 5.8 GHz
I High maximum stable gain 27 dB at 1.8 GHz
I 110 GHz fT silicon germanium technology

1.3 Applications
I 2nd LNA stage and mixer stage in DBS LNB's
I Satellite radio
I Low noise amplifiers for microwave communications systems
I WLAN and CDMA applications
I Analog/digital cordless applications
I Ka band oscillators (DRO's)

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCBO collector-base voltage open emitter - - 10 V
VCEO collector-emitter voltage open base - - 2.8 V
VEBO emitter-base voltage open collector - - 0.55 V
IC collector current - 25 40 mA
Ptot total power dissipation Tsp 90