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STB10NK60Z, STP10NK60Z
STW10NK60Z
N-channel 650 V, 0.65 , 10 A, SuperMESHTM Power MOSFET
Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247

Features
RDS(on)
Type VDSS ID Pw
max
STB10NK60Z-1 600 V < 0.75 10 A 115 W 12
3

STB10NK60Z 600 V < 0.75 10 A 115 W TO-247 TO-262
STP10NK60Z 600 V < 0.75 10 A 115 W 3
< 0.75 10 A
1
STP10NK60ZFP 600 V 35 W
TO-263
STW10NK60Z 600 V < 0.75 10 A 156 W
3
Extremely high dv/dt capability 1
2 2
3
1

100% avalanche tested TO-220FP TO-220
Gate charge minimized
Very good manufacturing reliability
Figure 1. Internal schematic diagram
Application
Switching applications

Description
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.

Table 1. Device summary
Order codes Marking Package Packaging

STB10NK60Z-1 B10NK60Z I