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2N6661/VN88AFD
Vishay Siliconix
N-Channel 80-V and 90-V (D-S) MOSFETS
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)
2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9
VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS
D Low Threshold: 1.6 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps,
D Low Input Capacitance: 35 pF D Easily Driven Without Buffer Hammers, Displays, Memories, Transistors,
D Fast Switching Speed: 6 ns D High-Speed Circuits etc.
D Low Input and Output Leakage D Low Error Voltage D Battery Operated Systems
D Solid-State Relays
TO-205AD TO-220SD D
(TO-39) (Tab-Drain)
S Device Marking Device Marking
Side View Front View
1
2N6661 G VN88AFD
"S" fllxxyy "S" xxyy
"S" = Siliconix Logo "S" = Siliconix Logo
2 3 f = Factory Code xxyy = Date Code
G D ll = Lot Traceability
xxyy = Date Code S G D S
Top View Front View
N-Channel MOSFET
2N6661 VN88AFD
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 2N6661 VN88AFD Unit
Drain-Source Voltage VDS 90 80
V
Gate-Source Voltage VGS "20 "30
TC = 25_C 0.9 1.29
_
Continuous Drain Current (TJ = 150_C) ID
TC = 100_C 0.7 0.81 A
Pulsed Drain Currenta IDM "3 "3
TC = 25_C 6.25 15
Power Dissipation PD W
TC = 100_C 2.5 6
Thermal Resistance, Junction-to-Ambientb RthJA 170
_C/W
_
Thermal Resistance, Junction-to-Case RthJC 8.3
Operating Junction and Storage Temperature Range TJ, Tstg