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2SC5585
SOT-523 Transistor(NPN)
1. BASE SOT-523
2. EMITTER
3. COLLECTOR
Features
High current.
Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.5 A
PC Collector Power Dissipation 0.15 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 15 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 12 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB= 15 V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 6V, IC=0 0.1 A
DC current gain hFE VCE=2V, IC=10mA 270 680
Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=10mA 0.25 V
Transition frequency fT VCE=2V,IC=10mA, f=100MHz 320 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 7.5 pF
2SC5585
SOT-523 Transistor(NPN)
Typical Characteristics