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KSA931
TO-92L Transistor (PNP)
TO-92L
1.EMITTER 4.700
5.100
2.COLLECTOR
7.800
3.BASE
8.200
3
2
1 0.600
Features 0.800
Low Frequency Amplifier 0.350
0.550
Medium Speed Switching 13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V 1.270 TYP
2.440
VCEO Collector-Emitter Voltage -60 V 2.640
VEBO Emitter-Base Voltage -8 V 0.000 1.600
0.300
IC Collector Current -Continuous -0.7 A
0.350
Collector Power Dissipation 1 W 0.450
PC 3.700
4.100 1.280
TJ Junction Temperature 150 1.580
Tstg Storage Temperature -55 to +150 4.000
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYPE MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -8 V
Collector cut-off current ICBO VCB= -60 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE VCE=-2 V, IC= -50mA 40 240
Collector-emitter saturation voltage VCE(sat) IC= -500m A, IB= -50mA -0.7 V
Base-emitter saturation voltage VBE(sat) IC= -500m A, IB= -50mA -1.2 V
Transition frequency fT VCE= -10 V, IC= -50mA 100 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 13 pF
CLASSIFICATION OF hFE
Rank R O Y
Range 40-80 70-140 120-240
KSA931
TO-92L Transistor (PNP)
Typical Characteristics