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SEMICONDUCTOR MJE13003HV
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR


SWITCHING REGULATOR APPLICATION.
A
HIGH VOLTAGE AND HIGH SPEED B D

SWITCHING APPLICATION. C
E


F
FEATURES
Excellent Switching Times G
: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A
High Collector Voltage : VCBO=900V. H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
E 3.5
_
11.0 + 0.3
MAXIMUM RATING (Ta=25 ) F
G 2.9 MAX
M
CHARACTERISTIC SYMBOL RATING UNIT H 1.0 MAX
J 1.9 MAX
O K _
0.75 + 0.15
Collector-Base Voltage VCBO 900 V N P
L _
15.50 + 0.5
1 2 3
M _
2.3 + 0.1
Collector-Emitter Voltage VCEO 530 V N _
0.65 + 0.15
1. EMITTER O 1.6
Emitter-Base Voltage VEBO 9 V 2. COLLECTOR P 3.4 MAX
3. BASE
DC IC 1.5
Collector Current A
Pulse ICP 3
TO-126
Base Current IB 0.75 A

Collector Power Dissipation (Tc=25 ) PC 20 W

Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 A
hFE(1) VCE=10V, IC=10 A 15 - 40
DC Current Gain *hFE(2) VCE=10V, IC=0.4A 20 - 40
hFE(3) VCE=10V, IC=1A 6 - -

Collector-Emitter IC=0.5A, IB=0.1A - - 0.8
VCE(sat) V
Saturation Voltage IC=1.5A, IB=0.5A - - 2.5

Base-Emitter IC=0.5A, IB=0.1A - - 1
VBE(sat) V
Saturation Voltage IC=1A, IB=0.25A - - 1.2
Collector Output Capacitance Cob VCB=10V, f=0.1MHz, IE=0 - 21 - pF
Transition Frequency fT VCE=10V, IC=0.1A 4 - - MHz
OUTPUT
Turn-On Time ton 300