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April 1995
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode field effect transistors 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.
are produced using Fairchild's proprietary, high cell density,
High density cell design for low RDS(ON).
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, Voltage controlled small signal switch.
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are Rugged and reliable.
particularly suited for low voltage, low current applications such High saturation current capability.
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
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D
G
S
Absolute Maximum Ratings T A = 25