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STD3NB50
STD3NB50-1
N - CHANNEL 500V - 2.5 - 3A - IPAK/DPAK
PowerMESHTM MOSFET
PRELIMINARY DATA
Table 1. General Features Figure 1. Package
Type VDSS RDS(on) ID
STD3NB50 500 V < 2.8 3A
STD3NB50-1 500 V < 2.8 3A
FEATURES SUMMARY
TYPICAL RDS(on) = 2.5
s)
3 3
EXTREMELY HIGH dv/dt CAPABILITY
t(
2
100% AVALANCHE TESTED 1 1
VERY LOW INTRINSIC CAPACITANCES
d uc
ro
GATE CHARGE MINIMIZED IPAK DPAK
TO-251 TO-252
eP
DESCRIPTION
let
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
so
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip Figure 2. Internal Schematic Diagram
Ob
layout coupled with the Company's proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
-
(s)
dt capabilities and unrivalled gate charge and
switching characteristics.
ct
du
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
o
Pr
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
e
let
POWER SUPPLIES AND MOTOR DRIVE
o
O bs
Table 2. Order Codes
Part Number Marking Package Packaging
STD3NB50T4 D3NB50 DPAK TAPE & REEL
STD3NB50-1 D3NB50 IPAK TUBE
REV. 2
April 2004 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STD3NB50/STD3NB50-1
Figure 3. Absolute Maximum Ratings
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain- gate Voltage (RGS = 20 k) 500 V
VGS Gate-source Voltage