Text preview for : irf150.pdf part of
| Home
PD - 90337G
REPETITIVE AVALANCHE AND dv/dt RATED IRF150
HEXFET TRANSISTORS JANTX2N6764
THRU-HOLE (TO-204AA/AE) JANTXV2N6764
[REF:MIL-PRF-19500/543]
100V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF150 100V 0.055 38A
The HEXFETtechnology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
Features:
very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings
stability of the electrical parameters. n Dynamic dv/dt Rating
n Hermetically Sealed
They are well suited for applications such as switching
n Simple Drive Requirements
power supplies, motor controls, inverters, choppers, audio
n Ease of Paralleling
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25