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2SA966
TO-92L Transistor (PNP)
1. EMITTER TO-92L
4.700
5.100
2. COLLECTOR
3. BASE 7.800
8.200
3
2
1 0.600
Features
0.800
Complementary to 2SC2236 and 3 Watts output Applications. 0.350
0.550
13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted )
Symbol Parameter Value Units
VCBO Collector-Base Voltage -30 V
1.270 TYP
VCEO Collector-Emitter Voltage -30 V 2.440
2.640
VEBO Emitter-Base Voltage -5 V
0.000 1.600
0.300
IC Collector Current -Continuous -1.5 A
0.350
Pc Collector Power Dissipation 0.9 W 3.700 0.450
4.100 1.280
TJ Junction Temperature 150 1.580
Tstg Storage Temperature -55-150 4.000
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -1mA , IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA ,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V
Collector cut-off current ICBO VCB= -30V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC= -500mA 100 320
Collector-emitter saturation voltage VCE(sat) IC= -1.5 A, IB= -0.03A -2 V
Base-emitter voltage VBE IC= -500mA,VCE=-2V -1 V
Transition frequency fT VCE= -2V, IC=-500mA 120 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 30 pF
CLASSIFICATION OF hFE
Rank O Y
Range 100-200 160-320
2SA966
TO-92L Transistor (PNP)
Typical Characteristics