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SEMICONDUCTOR KRC821E~KRC826E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B
B1
FEATURES
With Built-in Bias Resistors.
1 6 DIM MILLIMETERS
C
Simplify Circuit Design. A _
1.6 + 0.05
A1
_
A
A1 1.0 + 0.05
Reduce a Quantity of Parts and Manufacturing Process. 2 5 _
C
B 1.6 + 0.05
High Packing Density. B1 _
1.2 + 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P P
P 5
EQUIVALENT CIRCUIT BIAS RESISTOR VALUES
H
OUT TYPE NO. R1(k ) R2(k )
J
KRC821E 4.7 4.7
R1 KRC822E 10 10 1. Q1 COMMON (EMITTER)
IN 2. Q2 COMMON (EMITTER)
3. Q2 IN (BASE)
R2 KRC823E 22 22 4. Q2 OUT (COLLECTOR)
5. Q1 IN (BASE)
KRC824E 47 47 6. Q1 OUT (COLLECTOR)
COMMON KRC825E 2.2 47
KRC826E 4.7 47 TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
Q1
Q2
MAXIMUM RATING (Ta=25 ) 1 2 3
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage KRC821E 826E VO 50 V
KRC821E 20, -10
KRC822E 30, -10
KRC823E 40, -10
Input Voltage VI V
KRC824E 40, -10
KRC825E 12, -5
KRC826E 20, -5
Output Current IO 100 mA
Power Dissipation PD* 200 mW
KRC821E 826E
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Rating.
Marking 6 5 4
Lot No.
MARK SPEC
Type Name
TYPE KRC821E KRC822E KRC823E KRC824E KRC825E KRC826E
MARK YA YB YC YD YE YF
1 2 3
2008. 11. 20 Revision No : 3 1/6
KRC821E~KRC826E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current KRC821E 826E IO(OFF) VO=50V, VI=0 - - 500 nA
KRC821E 30 55 -
KRC822E 50 80 -
KRC823E 70 120 -
DC Current Gain GI VO=5V, IO=10mA
KRC824E 80 200 -
KRC825E 80 200 -
KRC826E 80 200 -
Output Voltage KRC821E 826E VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V
KRC821E - 1.5 2.0
KRC822E - 1.8 2.4
KRC823E - 2.1 3.0
Input Voltage (ON) VI(ON) VO=0.2V, IO=5mA V
KRC824E - 2.8 5.0
KRC825E - 0.8 1.1
KRC826E - 0.9 1.3
KRC821E 824E 1.0 1.2 -
Input Votlage (OFF) VI(OFF) VO=5V, IO=0.1mA V
KRC825E 826E 0.5 0.65 -
Transition Frequency KRC821E 826E fT * VO=10V, IO=5mA - 200 - MHz
KRC821E - - 1.8
KRC822E - - 0.88
KRC823E - - 0.36
Input Current II VI=5V mA
KRC824E - - 0.18
KRC825E - - 3.6
KRC826E - - 1.8
KRC821E 3.29 4.7 6.11
KRC822E 7 10 13
KRC823E 15.4 22 28.6
Input Resistor R1 - k
KRC824E 32.9 47 61.1
KRC825E 1.54 2.2 2.86
KRC826E 3.29 4.7 6.11
KRC821E 824E 0.8 1.0 1.2
Resistor Ratio KRC825E R2/R1 - 17 21 26
KRC826E 8 10 12
Note : * Characteristic of Transistor Only.
2008. 11. 20 Revision No : 3 2/6
KRC821E~KRC826E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC821E - 0.03 -
KRC822E - 0.05 -
KRC823E - 0.12 -
Rise Time tr
KRC824E - 0.22 -
KRC825E - 0.01 -
KRC826E - 0.03 -
KRC821E - 2.0 -
KRC822E - 2.0 -
VO=5V
Switching KRC823E - 2.0 -
Storage Time tstg VIN=5V S
Time KRC824E - 2.0 -
RL=1k
KRC825E - 2.0 -
KRC826E - 2.0 -
KRC821E - 0.12 -
KRC822E - 0.36 -
KRC823E - 0.35 -
Fall Time tf
KRC824E - 0.6 -
KRC825E - 0.1 -
KRC826E - 0.19 -
2008. 11. 20 Revision No : 3 3/6
KRC821E~KRC826E
IO - VI(ON) IO - VI(ON)
KRC821E KRC822E
100 100
VO =0.2V 25 VO =0.2V
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
50 -25 50
30 100 30
10 10
Ta=25 C
5 5
00 C
00 C
Ta=-25 C Ta=25 C
3 3
Ta=1
Ta=-25 C
Ta=1
1 1
0.5 0.5
0.3 0.3
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
INPUT ON VOLTAGE VI(ON) (V) INPUT ON VOLTAGE VI(ON) (V)
IO - VI(ON)
I O - V I(ON)
KRC823E KRC824E
100 100
VO =0.2V VO =0.2V
OUTPUT CURRENT IO (mA)
50 50
OUTPUT CURRENT I O (mA)
30 30
10 10
C
5 5
Ta=25 C C Ta=25 C
100
00
3 3
=1
Ta=-25 C
Ta=
Ta=-25 C
Ta
1 1
0.5 0.5
0.3 0.3
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
INPUT ON VOLTAGE VI(ON) (V) INPUT ON VOLTAGE VI(ON) (V)
IO - VI(ON) IO - VI(ON)
KRC825E KRC826E
100 100
VO =0.2V VO =0.2V
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
50 50
30 30
10 10
C
00 C
5 5
00
Ta=25 C Ta=25 C
3 3
Ta=1
Ta=1
Ta=-25 C Ta=-25 C
1 1
0.5 0.5
0.3 0.3
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
INPUT ON VOLTAGE VI(ON) (V) INPUT ON VOLTAGE VI(ON) (V)
2008. 11. 20 Revision No : 3 4/6
KRC821E~KRC826E
IO - VI(OFF) IO - VI(OFF)ON
KRC821E KRC822E
10k 10k
VO =5V VO =5V
OUTPUT CURRENT IO (