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Ie]R IPP023N04N G
IPB023N04N G

TM
"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9H ,( K
Q & ( , - 7 ( + :? 8 2 ? 5 . ? :? D B :3 = ) @G6B EAA=
@B 6BEAD 6 , I
R , @? >2 H *&+ Z"
)#
Q * E2 =:65 2 44@B 8 D $
:7 5:? @ 7 D B 2 AA= D C
@B 2 86D :42 :@?
I9 1( 6
Q' 492 ? ? 6=

Q' @B 2 =6F
> = 6=

Q. = 2 = @? B :C 2 ? 46 R 9H"\[#
D @G
B 6C D

Q F =? 496 D D
2 2 6C 65

Q ) 3 766 A=D 8 + @" , 4@> A= ? D
B 2 :? :2

Q" 2 =
@86? 766 2 44@B 8 D #
B 5:? @


Type #) ' ' ! #) ) ' ' !




Package E=%ID*.+%+ E=%ID**(%+

Marking (*+C(,C (*+C(,C

Maximum ratings, 2 D W T E? = C @D G:C C
T 6C 96B 6 A64:7
:65

Parameter Symbol Conditions Value Unit

@? D E@EC 5B :? 4EB6? D
:? 2 B I9 V =H / T 8 T 1( 6

V =H / T 8 T 1(

B *#
) E=65 5B :? 4EB6? D
C 2 I 9$]aY_R T 8 T ,((

F =? 496 4EB6? D C 8= AE=6+#
2 2 B :? 6 C I 6H T 8 T 1(

8I :? 6 C
F =? 496 6? 6B C 8= AE=6
2 2 E 6H I 9 R =H " )-( Z@

!2 D C 46 F D 86
6 @EB @= 2 V =H q*( K
)#
$ , - 2 ? 5 $ ,




+ 6F


A2 86
IPP023N04N G
IPB023N04N G

Maximum ratings, 2 D W T E? = C @D G:C C
T 6C 96B 6 A64:7
:65

Parameter Symbol Conditions Value Unit

) @G6B C D
5:C :A2 :@? P `\` T 8 T )./ L

( A6B D 8 2 ? 5 C @B 86 D A6B D 6
2 :? D2 6> 2 EB T W T _`T


T

# 4= 2 D 42 D
:> :4 68@B #' #
I


Parameter Symbol Conditions Values Unit

min. typ. max.


Thermal characteristics

-96B 2 = 6C D ? 46 ; 4D 42 C
> B :C 2 E? :@? 6 R `U@8 % % (&1 A'L

, & F C 56F @? )
6B:@? :46 R `U@6 > :? :> 2 =@@D :? D
7 AB
,#
4> V 4@@= 8 2 B
:? 62 % % ,(


Electrical characteristics, 2 D W T E? = C @D G:C C
T 6C 96B 6 A64:7
:65


Static characteristics

B :? C 46 3 B <5@G? F D 86
2 @EB 62 @=2 V "7G#9HH V =H / I 9 > ,( % % K

!2 D D 6C 5 F D 86
6 9B 9@= @=2 V =H"`U# V 9H4V =H I 9 W * % ,

V 9H / V =H /
16B 82 D F D 86 5B :? 4EB6? D
@ 6 @=2 2 B I 9HH % (&) ) s6
T W T

V 9H / V =H /
% )( )((
T W T

!2 D @EB = <2 86 4EB6? D
6C 46 62 B I =HH V =H / V 9H / % )( )(( [6

B :? C 46 @? C 2 D B :C 2 ? 46-#
2 @EB D 6 6C D R 9H"\[# V =H / I 9 % )&1 *&+ Z"

!2 D B :C 2 ? 46
6 6C D R= % )&1 % "

gV 9Hg5*gI 9gR 9H"\[#ZNd
I^N[_P\[QaP`N[PR g S_ /- )-( % H
I 9
*#
, 66 7 6 7 > @B 56D := :? 7 > 2 D
:8EB @B 6 2 65 @B :@?
+#
, 66 7 6 7 > @B 56D := :? 7 > 2 D
:8EB @B 6 2 65 @B :@?
,#
6F @? > > H > > H
> > 6A@HI )
:46 9 2
+ G:D 4> @? 6 =I6B W > D
9:4< 4@AA6B B 7 5B :?
2 62 @B 2
4@? ? 64D
) :C F D = C :=2 :B
:@? 6B:42 :? D=

-#
& 62 C 65 7@> 5B :? D 3 D C 46 A:?
EB B 2 2 @ @EB




+ 6F


A2 86
IPP023N04N G
IPB023N04N G

Parameter Symbol Conditions Values Unit
min. typ. max.


Dynamic characteristics

42
#? AED A2 4:D ? 46
2 C V__ % /+(( )(((( ]<
V =H / V 9H /
AED
( ED 42 A2 4:D ? 46
2 C \__ % *((( */((
f & " J
6B6 B 7 42
+ 6F C D2 ? C 6B A2 4:D ? 46
2 8^__ % // %

-EB @? 56=I D 6
? 2 :> t Q"\[# % */ % [_

+ :C D 6
6 :> t^ V 99 / V =H / % .&. %

? 7 2 :>
-EB @7 56=I D 6 t Q"\SS# I 9 R =
" % ,( %

2 =D 6
=:> tS % /&0 %


!2 D 92 B 92 B 4D :C :4C.#
6 T6 2 6B D

!2 D D C 46 492 B
6 @ @EB 86 Q T_ % +- % [8

6
!2 D 492 B 2 D 9B 9@=
86 D 6C 5 Q T"`U# % ** %

!2 D D 5B :? 492 B
6 @ 2 86 Q TQ V 99 / I 9 % )) %

Q _c V =H D /
@
, G:D 8 492 B
49:? 86 % *, %

6
!2 D 492 B D 2 =
86 @D QT % 1( )*(

!2 D A=D E F D 86
6 2 62 @=2 V ]YN`RNa % ,&0 % K

V 9H
/
!2 D 492 B D 2 =C 4
-
6 86 @D I? Q T"_e[P# % 0- % [8
V =H D /
@

( ED 492 B
AED 86 Q \__ V 99 / V =H / % /+ %

Reverse Diode

:@56 4@? D E@EC 7 G2 B 4EB6? D
:? @B 5 B IH % % 1( 6
T 8 T
C
:@56 AE=6 4EB6? D
B I H$]aY_R % % ,((

V =H / I <
:@56 7 G2 B F D 86
@B 5 @= 2 V H9 % (&1+ )&* K
T W T

V G / I <4I H
+ 6F C B
6B6 64@F I 492 B
6B 86 Q ^^ % 0( % [8
Qi <'Qt W C


.#
, 66 7 6 7 82 D 492 B A2 B > 6D 567 :D
:8EB @B 6 86 2 6B :? :@?




+ 6F


A2 86
IPP023N04N G
IPB023N04N G
1 Power dissipation 2 Drain current
P `\`4S"T 8# I 94S"T 8 V =H" /



200 100




80
150



60
P tot [W]




I D [A]
100

40



50
20




0 0
0 50 100 150 200 0 50 100 150 200
T C [