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July 1998
FDS8928A
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These dual N- and P -Channel enhancement mode power
N-Channel 5.5 A,30 V, RDS(ON)=0.030 @ VGS=4.5 V
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very RDS(ON)=0.038 @ VGS=2.5 V.
high density process is especially tailored to minimize P-Channel -4 A,-20 V, RDS(ON)=0.055 @ VGS=-4.5 V
on-state resistance and provide superior switching RDS(ON)=0.072 @ VGS=-2.5 V.
performance. These devices are particularly suited for low
voltage applications such as notebook computer power High density cell design for extremely low RDS(ON).
management and other battery powered circuits where fast
High power and current handling capability in a widely used
switching, low in-line power loss, and resistance to
surface mount package.
transients are needed.
Dual (N & P-Channel) MOSFET in surface mount package.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D2 5 4
D2
D1 S
D1 FD 8A 6 3
2
89
7 2
G2
S2 8 1
G1
SO-8 pin 1
S1
Absolute Maximum Ratings T A = 25