2sc6076_091221.pdf part of Toshiba 2sc6076 091221 2sc6076_091221.pdf, . Electronic Components Datasheets Active components Transistors Toshiba 2sc6076

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2SC6076
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC6076
Power Amplifier Applications
Unit: mm
Power Switching Applications

Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A)
High-speed switching: tstg = 0.4 s (typ.)

Absolute Maximum Ratings (Ta = 25