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CEP9060N/CEB9060N
CEF9060N
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
Type VDSS RDS(ON) ID @VGS
CEP9060N 55V 10.5m 90A 10V
CEB9060N 55V 10.5m 90A 10V
CEF9060N 55V 10.5m 90A e
10V

D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.

G
D

G G
G D D
S S S S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 55 V
Gate-Source Voltage VGS