cem6867.pdf part of CET cem6867 cem6867.pdf, . Electronic Components Datasheets Active components Transistors CET cem6867.pdf text manual preview

Text preview for : cem6867.pdf part of CET cem6867 . Electronic Components Datasheets Active components Transistors CET cem6867.pdf

Back to : cem6867.pdf | Home

CEM6867
Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-60V, -3.1A, RDS(ON) = 130m @VGS = -10V.
RDS(ON) = 170m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
D1 D1 D2 D2
Lead free product is acquired. 8 7 6 5

Surface mount Package.

SO-8 1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS