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2SD1911 Silicon Diffused Power Transistor
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers

QUICK REFERENCE DATA TO-3PFM
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO Collector-emitter voltage (open base) - 600 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Tmb 25 - 50 W
VCEsat Collector-emitter saturation voltage IC = 4.0A; IB = 0.8A - 5 V
Icsat Collector saturation current f = 16KHz 4.5 - A
VF Diode forward voltage IF = 4.5A 1.6 2.0 V
tf Fall time ICsat = 4.0A; f = 16KHz 1.0 s



LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO Collector-emitter voltage (open base) - 600 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
IB Base current (DC) - A
IBM Base current peak value - A
Ptot Total power dissipation Tmb 25 - 50 W
Tstg Storage temperature -65 150
Tj Junction temperature - 150



ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICE Collector cut-off current VBE = 0V; VCE = VCESMmax - 1.0 mA
ICES VBE = 0V; VCE = VCESMmax - 2.5 mA
Tj = 125
VCEOsust Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V
L = 25mH
VCEsat Collector-emitter saturation voltages IC = 4.0A; IB = 0.8A - 5.0 V
VBEsat Base-emitter satuation voltage IC = 4.0A; IB = 0.8A - 1.5 V
hFE DC current gain IC = 1.0A; VCE = 5V 8
VF Diode forward voltage IF = 4.5A 1.6 2.0 V
fT Transition frequency at f = 5MHz IC = 0.1A; VCE = 10V 3 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 110 - pF
ts Switching times(16KHz line deflecton circuit) Ic=4A,IB(end)=0.8A,VCC=105V - s
tf Turn-off storage time Turn-off fall time Ic=4A,IB(end)=0.8A,VCC=105V 0.7 1.0 s



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Homepage: http://www.wingshing.com E-mail: [email protected]