Text preview for : stp40ns15.pdf part of ST stp40ns15 . Electronic Components Datasheets Active components Transistors ST stp40ns15.pdf
Back to : stp40ns15.pdf | Home
STP40NS15
N-CHANNEL 150V - 0.042 - 40A TO-220
MESH OVERLAYTM MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP40NS15 150 V <0.052 40A
s TYPICAL RDS(on) = 0.042
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3
2
DESCRIPTION 1
s)
This powermos MOSFET is designed using the TO-220
t(
company's consolidated strip layout-based MESH
OVERLAYTM process. This technology matches
uc
and improves the performances compared with
standard parts from various sources.
d
APPLICATIONS P ro
INTERNAL SCHEMATIC DIAGRAM
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
le te
so
s PRIMARYSWITCH IN ISOLATED DC-DC
Ob
CONVERTERS
-
ABSOLUTE MAXIMUM RATINGS
ct (s)
Symbol
o du Parameter Value Unit
Pr
VDS Drain-source Voltage (VGS = 0) 150 V
VDGR Drain-gate Voltage (RGS = 20 k) 150 V
e
let
VGS Gate- source Voltage