Text preview for : fdn359an.pdf part of
| Home
April 1999
FDN359AN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description Features
This N-Channel Logic Level MOSFET is produced 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V
using Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V.
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain Very fast switching.
superior switching performance.
Low gate charge (5nC typical).
These devices are well suited for low voltage and
battery powered applications where low in-line power High power version of industry standard SOT-23
loss and fast switching are required. package. Identical pin out to SOT-23 with 30% higher
power handling capability.
SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16
D
D
9A
35
S
SuperSOT -3
TM G G S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage