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SEMICONDUCTOR KTA539
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW FREQUENCY AMPLIFIER
B C
FEATURES
Collector-Base Voltage : VCBO=-60V.
A
Complementary to KTC815.
DIM MILLIMETERS
N A 4.70 MAX
E B 4.80 MAX
K
G C 3.70 MAX
D D 0.45
E 1.00
J
F 1.27
G 0.85
MAXIMUM RATING (Ta=25 ) H 0.45
J _
14.00 + 0.50
H K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT
F F L 2.30
M 0.45 MAX
Collector-Base Voltage VCBO -60 V N 1.00
Collector-Emitter Voltage VCEO -45 V 1 2 3
C
L
M
Emitter-Base Voltage VEBO -5 V 1. EMITTER
2. BASE
Collector Current IC -200 mA 3. COLLECTOR
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 TO-92
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A, IE=0 -60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -45 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 5 - - V
Collector Cut-off Current ICBO VCB=-45V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-3V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-1V, IC=-50mA 70 - 240
Base-Emitter Voltage VBE VCE=-1V, IC=-10mA -0.6 -0.65 -0.9 V
Collector-Emitter Saturation Voltage VCE(sat) IC=-150mA, IB=-15mA - -0.25 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-150mA, IB=-15mA - -0.9 -1.2 V
Transition Frequency fT VCE=-10V, IC=-10mA 100 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 6 - pF
Note : hFE Classification O:70~140, Y:120~240
2003. 3. 5 Revision No : 0 1/2
KTA539
I C - VCE h FE - I C
-180 1K
I B =-0.8mA VCE =-1V
COLLECTOR CURRENT I C (mA)
-160 I B =-0.7mA 500
DC CURRENT GAIN h FE
-140 I B =-0.6mA
300
-120 I B =-0.5mA
-100 I B =-0.4mA
I B =-0.3mA 100
-80
-60 I B =-0.2mA 50
-40 30
I B =-0.1mA
-20
0 10
0 -5 -10 -15 -20 -25 -30 -35 -40 -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) , VBE(sat) - I C I C - V BE
-3 -300
I C =10I B VCE =-1V
COLLECTOR CURRENT I C (mA)
SATURATION VOLTAGE
-1 VBE(sat) -100
VCE(sat) , VBE(sat) (V)
-0.5
-0.3 -30
-0.1 -10
VCE(sat)
-0.05
-0.03 -3
-0.01 -1
-1 -3 -10 -30 -100 -300 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
COLLECTOR CURRENT I C (mA) BASE EMITTER VOLTAGE VBE (V)
C ob - VCB Pc - Ta
COLLECTOR OUTPUT CAPACITANCE
30 700
f=1MHz
COLLECTOR POWER DISSIPATION
I E =0
600
500
10
C ob (pF)
PC (mW)
400
5
300
3
200
100
1 0
-1 -3 -5 -10 -30 -50 0 25 50 75 100 125 150 175
COLLECTOR BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C)
2003. 3. 5 Revision No : 0 2/2