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BDW93B/BDW93C
BDW94B/BDW94C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
3
DESCRIPTION 2
1
The BDW93B, and BDW93C are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration and are TO-220
mounted in Jedec TO-220 plastic package. They
are intented for use in power linear and switching
applications.
The complementary PNP types are the BDW94B
and BDW94C respectively.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K R 2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BDW 93B BDW 93C
PNP BDW 94B BDW 94C
V CBO Collector-Base Voltage (IE = 0) 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 80 100 V
IC Collector Current 12 A
I CM Collector Peak Current 15 A
IB Base Current 0.2 A
P t ot Total Dissipation at T c 25 C o
80 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.
June 1997 1/6
BDW93B/BDW93C/BDW94B/BDW94C
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case 1.56 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off for BDW 93B/94B V CB = 80 V 100