Text preview for : stsj25nf3ll.pdf part of ST stsj25nf3ll . Electronic Components Datasheets Active components Transistors ST stsj25nf3ll.pdf
Back to : stsj25nf3ll.pdf | Home
STSJ25NF3LL
N-CHANNEL 30V - 0.0085 - 25A PowerSO-8TM
LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
STSJ25NF3LL 30 V <0.0105 25 A
s TYPICAL RDS(on) = 0.0085 @ 10V
s TYPICAL Qg = 24 nC @ 4.5 V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTION PowerSO-8TM
t( s)
uc
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
od
SizeTM" strip-based process. This silicon, housed
in thermally improved SO-8TM package, exhibits
r
eP
optimal on-resistance versus gate charge trade- INTERNAL SCHEMATIC DIAGRAM
et
off plus lower R thj-c.
ol
bs
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
) -O
FOR HIGH EFFICIENCY CPU CORE DC/DC
t(s
uc
CONVERTERS FOR MOBILE PCS
ro d DRAIN CONTACT ALSO ON THE BACKSIDE
et eP
ol
bs
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
O VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
30
30
V
V
VGS Gate- source Voltage