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STB15N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STB15N25 250 V < 0.25 15 A

s TYPICAL RDS(on) = 0.2
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INPUT CAPACITANCE
s LOW GATE CHARGE
3 3
s LOW LEAKAGE CURRENT 12 1
s APPLICATION ORIENTED
CHARACTERIZATION
I2PAK D2PAK
s THROUGH-HOLE I2PAK (TO-262) POWER
TO-262 TO-263
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS INTERNAL SCHEMATIC DIAGRAM
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)

s CONSUMER AND INDUSTRIAL LIGHTING

s DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 250 V
VDGR Drain- gate Voltage (R GS = 20 k) 250 V
V GS Gate-source Voltage