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SEMICONDUCTOR MPSA42/43
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
B C
FEATURES
Complementary to MPSA92/93.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
MAXIMUM RATING (Ta=25 )
J
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base MPSA42 300 H 0.45
VCBO V H J _
14.00 + 0.50
Voltage MPSA43 200 F F K 0.55 MAX
L 2.30
MPSA42 300 M 0.45 MAX
Collector-Emitter
VCEO V N 1.00
C
1 2 3
Voltage
L
MPSA43 200
M
1. EMITTER
Emitter-Base Voltage VEBO 6.0 V 2. BASE
3. COLLECTOR
Collector Current IC 500 mA
Emitter Current IE -500 mA
Collector Power Dissipation PC 625 mW TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base MPSA42 300 - -
V(BR)CBO IC=100 A, IE=0 V
Breakdown Voltage MPSA43 200 - -
Collector-Emitter MPSA42 300 - -
V(BR)CEO IC=1.0mA, IB=0 V
Breakdown Voltage MPSA43 200 - -
Collector Cut-off MPSA42 VCB=200V, IE=0 - - 0.1
ICBO A
Current MPSA43 VCB=160V, IE=0 - - 0.1
Emitter Cut-off MPSA42 VEB=6V, IC=0 - - 0.1
IEBO A
Current MPSA43 VEB=4V, IC=0 - - 0.1
IC=1.0mA, VCE=10V 40 - -
DC Current Gain * hFE IC=10mA, VCE=10V 40 - -
IC=30mA, VCE=10V 40 - -
Collector-Emitter Saturation Voltage * VCE(sat) IC=20mA, IB=2.0mA - - 0.5 V
Base-Emitter Saturation Voltage * VBE(sat) IC=20mA, IB=2.0mA - - 0.9 V
Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 50 - - MHz
Collector Output MPSA42 - - 3.0
Cob VCB=20V, IE=0, f=1MHz pF
Capacitance MPSA43 - - 4.0
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
1999. 11. 30 Revision No : 3 1/2
MPSA42/43
1999. 11. 30 Revision No : 3 2/2