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CEK01N65
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY



FEATURES

650V, 0.35A, RDS(ON) = 10.5 @VGS = 10V.

High dense cell design for extremely low RDS(ON).

Rugged and reliable.
D
Lead free product is acquired.

TO-92(Bulk) & TO-92(Ammopack) package.




G


G
D G
S D
S
TO-92(Ammopack) TO-92(Bulk)
S



ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS