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SEMICONDUCTOR KTA702E
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION. B
B1
FEATURES
A Collector Current is Large.
1 6 DIM MILLIMETERS
C
Collector Saturation Voltage is low. A _
1.6 + 0.05
A1
_
A
A1 1.0 + 0.05
: VCE(sat) -250mV at IC=-200mA/IB=-10mA. 2 5 _
C
B 1.6 + 0.05
Complementary to KTC802E. B1 _
1.2 + 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P P
P 5
MAXIMUM RATINGS (Ta=25 )
H
CHARACTERISTIC SYMBOL RATING UNIT
J
Collector-Base Voltage VCBO -15 V
1. Q 1 EMITTER
Collector-Emitter Voltage VCEO -12 V 2. Q 1 BASE
3. Q 2 COLLECTOR
4. Q 2 EMITTER
Emitter-Base Voltage VEBO -6 V 5. Q 2 BASE
6. Q 1 COLLECTOR
IC -500 mA
Collector Current
ICP (Note) -1 A
TES6
Collector Power Dissipation PC * 200 mW
Junction Temperature Tj 150 EQUIVALENT CIRCUIT (TOP VIEW)
Storage Temperature Range Tstg -55 150 6 5 4
Note : Single pulse Pw=1mS.
* Total Rating.
Q1 Q2
1 2 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A -15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -6 - - V
DC Current Gain hFE VCE=-2V, IC=-10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-10mA - 100 -250 mV
Transition Frequency fT VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 6.5 - pF
Marking
6 5 4
Lot No.
Type Name
SZ
1 2 3
2008. 9. 23 Revision No : 2 1/3
KTA702E
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1K -1K
I C /IB =20
Ta=125 C -500
500
DC CURRENT GAIN h FE
Ta=25 C -300
VOLTAGE VCE(sat) (mV)
300
Ta=-40 C
-100
C
-50 125
Ta=
100 -30
25 C C
Ta= =-40
50 Ta
-10
30 -5
-3
VCE =-2V
10 -1
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
-1K -10K
COLLECTOR-EMITTER SATURATION
Ta=25 C I C /IB =20
BASE-EMITTER SATURATION
-500
-300 -5K
VOLTAGE VBE(sat) (mV)
VOLTAGE VCE(sat) (mV)
-3K
-100
-50 I C /IB =50
-30 -1K Ta=-40 C
I C /IB =20
I C /IB =10
-10 -500 Ta=25 C C
Ta=125
-5 -300
-3
-1 -100
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
I C - V BE fT - IC
-1K 1K
TRANSITION FREQUENCY f T (MHz)
VCE =-2V VCE =-2V
COLLECTOR CURRENT I C (mA)
-500 Ta=25 C
-300 500
300
-100
-50
25 C
5 C
40 C
-30 100
Ta=1
Ta=2
Ta=-
-10 50
-5 30
-3
-1 10
0 -0.5 -1.0 -1.5 -1 -3 -10 -30 -100 -300 -1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA)
2008. 9. 23 Revision No : 2 2/3
KTA702E
C ob - VCB , C ib - VEB
COLLECTOR OUTPUT CAPACITANCE C ob (PF)
1K Pc - Ta
COLLECTOR INPUT CAPACITANCE C ib (PF)
I E =0A
COLLECTOR POWER DISSIPATION PC (mW)
500 f=1MHz
Ta=25 C 250
300
200
100
50
150
30
C ib
100
10
5 C ob
3 50
0
1 0 25 50 75 100 125 150
-0.1 -0.3 -1 -3 -10 -30 -100
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
2008. 9. 23 Revision No : 2 3/3